Q1NE10L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

Q1NE10L

N-channel 100V - 0.3Ω - 1A - TO-92 STripFET™ Power MOSFET

STMicroelectronics 

STQ1NE10L

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD=1A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 1A,

di/dt = 100A/µs,

VDD=30V, TJ = 100°C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max Unit

1

A

4

A

1.5 V

52

ns

90

nC

3.5

A

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