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2N6420 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name
Description
View to exact match
2N6420
SPTECH
Shenzhen SPTECH Microelectronics Co., Ltd. SPTECH
2N6420 Datasheet PDF : 2 Pages
1 2
SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A
VBE(on) Base-Emitter On Voltage
IC= -1A ; VCE= -10V
ICEO
Collector Cutoff Current
VCE= -150V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -10V
hFE-2
DC Current Gain
IC= -0.5A ; VCE= -10V
hFE-3
DC Current Gain
IC= -1A ; VCE= -10V
2N6420
MIN MAX UNIT
-175
V
-5.0
V
-1.4
V
-10
mA
-5.0
mA
40
40
200
10
SPTECH websitewww.superic-tech.com
2
 

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