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SH8M14 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
SH8M14
ROHM
ROHM Semiconductor ROHM
SH8M14 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SH8M14
 
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.01
0.1
1
10
100
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.0
10000
1000
100
0.5
1.0
1.5
2.0
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
VDD15V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
tf
td(off)
td(on)
tr
10
1
0.01
0.1
1
10
Drain Current : ID [A]
Fig.8 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50
Ta=25°C
Pulsed
40
ID=4.5A
ID=9.0A
30
20
10
0
0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Fig.12 Dynamic Input Characteristics
10
Ta=25°C
VDD=15V
8
ID=9A
Pulsed
6
4
2
0
0
5
10
15
Total Gate Charge : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.06 - Rev.A

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