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SH8M14 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
SH8M14
ROHM
ROHM Semiconductor ROHM
SH8M14 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SH8M14
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on*)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
1.0
-
-
-
6.0
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
21.5
29.0
31.0
-
1200
170
170
12
40
80
65
18
3.5
6.5
Max.
10
-
1
2.5
29.0
39.0
40.8
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=7A, VGS=10V
mID=3.5A, VGS=4.5V
ID=3.5A, VGS=4.0V
S VDS=10V, ID=7A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=3.5A, VDD 15V
ns VGS=10V
ns RL=4.27
ns RG=10
nC ID=7A, VDD 15V
nC VGS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
1.2
Unit
Conditions
V Is=7A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/10
2011.06 - Rev.A
 

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