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SH8M14 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
SH8M14
ROHM
ROHM Semiconductor ROHM
SH8M14 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SH8M14
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V (BR)DSS 30
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
VGS (th)
1.0
Static drain-source on-state
resistance
-
RDS (on*)
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l * 5.0
Ciss
-
Coss
-
Crss
-
td(on) *
-
tr *
-
td(off) *
-
tf *
-
Qg *
-
Qgs *
-
Qgd *
-
 
Typ.
-
-
-
-
15
18
20
-
630
230
110
10
33
42
10
8.5
2.3
4.0
Max.
10
-
1
2.5
21
25
28
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=9A, VGS=10V
mID=9A, VGS=4.5V
ID=9A, VGS=4V
S VDS=10V, ID=9A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=4.5A, VDD 15V
ns VGS=10V
ns RL=3.3
ns RG=10
nC ID=9A, VDD 15V
nC VGS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
1.2
Unit
Conditions
V Is=9A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/10
2011.06 - Rev.A

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