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SH8M14 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
SH8M14
ROHM
ROHM Semiconductor ROHM
SH8M14 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Data Sheet
4V Drive Nch + Pch MOSFET
SH8M14
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SH8M14
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
*2
PD
Tch
Tstg
30
30
20
20
9
7
36
28
1.6
1.6
36
28
2.0
1.4
150
55 to 150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
2
2
1
1
(1)
(2) (3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.06 - Rev.A

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