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STP13NM60ND Datasheet PDF - STMicroelectronics

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Description
MFG CO.
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STP13NM60ND Datasheet PDF : STP13NM60ND pdf     
STF13NM60ND image

Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

Features
• The worldwide best RDS(on)* area among fast
   recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities

Applications
• Switching applications

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