These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
• The worldwide best RDS(on)* area among fast
recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
• Switching applications