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STP11N65M2 Datasheet PDF - STMicroelectronics

Part Name
Description
MFG CO.
Other PDF
  2019  
PDF
STP11N65M2 Datasheet PDF : STP11N65M2 pdf     
STD11N65M2 image

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

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