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STP11N52K3 Datasheet PDF - STMicroelectronics

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Description
MFG CO.
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STP11N52K3 Datasheet PDF : STP11N52K3 pdf     
STP11N52K3 image

Description
These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected

Applications
■ Switching applications

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