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STP10NM60N Datasheet PDF - STMicroelectronics

Part Name
Description
MFG CO.
Other PDF
  2015  
PDF
STP10NM60N Datasheet PDF : STP10NM60N pdf     
STF10NM60N image

Description
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.

■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
   Switching applications

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