STD6NM60N-1(2007) Datasheet PDF - STMicroelectronics
Part Name
Description
MFG CO.
STD6NM60N-1
STMicroelectronics
Other PDF
PDF
STD6NM60N-1 Datasheet PDF :
Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
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Part Name
Description
PDF
MFG CO.
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