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G10N50E1 Datasheet PDF - Intersil

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Description
MFG CO.
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G10N50E1 Datasheet PDF : G10N50E1 pdf     
HGTP10N40E1 image

Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

Features
• 10A and 12A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFI: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode

Applications
• Power Supplies
• Motor Drives
• Protection Circuits

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