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CA3141E Datasheet PDF - Harris Semiconductor

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MFG CO.
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CA3141E Datasheet PDF : CA3141E pdf     
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Description
The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are internally connected to form three common cathode diode pairs, and the remaining four diodes are internally connected to form two common anode diode pairs. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the CA3141 extremely useful for a wide variety of applications in communications and switching systems.

Features
• Matched Monolithic Construction
    - VF Match (Each Diode Pair). . . . 0.55mV At IF = 1mA
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at VR = 2V
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications
• Balanced Modulators or Demodulators
• Analog Switches
• High-Voltage Diode Gates
• Current Ratio Detectors

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