BFP740F Datasheet PDF - Infineon Technologies

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
   Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
   Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101