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SC4520

  

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Zentrum
Zentrum Mikroelektronik Dresden AG
U630H16BSC45 HardStore 2K x 8 nvSRAM

Description
The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin. The U630H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation
   (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classification see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mil)
                 SOP28 (300 mil)

 


other parts : U630H16  U630H16BD1C25  U630H16BD1C35  U630H16BD1C45  U630H16BD1K25  U630H16BD1K35  U630H16BD1K45  U630H16BDC25  U630H16BDC35  U630H16BDC45  
U630H16BSC45 PDF
Hitachi
Hitachi -> Renesas Electronics
2SC4501L Silicon NPN Epitaxial

Application
   High gain amplifier and medium speed switching


other parts : 2SC4501S  2SC4501  
2SC4501L PDF
Simtek
Simtek Corporation
U630H16XSC45 HardStore 2K x 8 nvSRAM Die

Description
The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pad. The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times.
The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are marked with a number sign (#).

Features
• High-performance CMOS nonvolatile static RAM 2048 x 8 bits
• 25, 35 and 45 ns Access Times
• 12, 20 and 25 ns Output Enable Access Times
• Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
• Automatic STORE Timing
• 106 STORE cycles to EEPROM
• 100 years data retention in EEPROM
• Automatic RECALL on Power Up
• Hardware RECALL Initiation
   (RECALL Cycle Time < 20 μs)
• Unlimited RECALL cycles from EEPROM
• Unlimited SRAM Read and Write
• Single 5 V ± 10 % Operation
• Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
• QS 90000 Quality Standard
• ESD protection > 2000 V
   (MIL STD 883C M3015.7-HBM)

 


other parts : U630H16XS  U630H16XSA25  U630H16XSA35  U630H16XSA45  U630H16XSC25  U630H16XSC35  U630H16XSK25  U630H16XSK35  U630H16XSK45  
U630H16XSC45 PDF
Zentrum
Zentrum Mikroelektronik Dresden AG
U632H16BSC45 PowerStore 2K x 8 nvSRAM

Description
The U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.
The U632H16 is a fast s tatic RAM (25, 35, 45 ns), w ith a nonvolatile electr ically erasable PROM (EEPROM) element incorporated n each static memory cell. The SRAM can be read and wri tten an unlimited number of ti mes, while ndependent nonvolatile data resides in EEPROM. Data transfers rom the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor. Transfers from he EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ ICC = 15 mA at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor
❐ Hardware or Software initiated STORE
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL I nitiation
   (RECALL Cycle Time < 20µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classific ation see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mi)
                 SOP28 (300 mil)

 


other parts : U632H16  U632H16DC25  U632H16DC35  U632H16DC45  U632H16DK25  U632H16DK35  U632H16DK45  U632H16D1C25  U632H16D1C35  U632H16D1C45  
U632H16BSC45 PDF
Zentrum
Zentrum Mikroelektronik Dresden AG
U630H16SC45 HardStore 2K x 8 nvSRAM

Description
The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin. The U630H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation
   (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classification see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mil)
                 SOP28 (300 mil)

 


other parts : U630H16  U630H16BD1C25  U630H16BD1C35  U630H16BD1C45  U630H16BD1K25  U630H16BD1K35  U630H16BD1K45  U630H16BDC25  U630H16BDC35  U630H16BDC45  
U630H16SC45 PDF
Hitachi
Hitachi -> Renesas Electronics
2SC4501S Silicon NPN Epitaxial

Application
   High gain amplifier and medium speed switching


other parts : 2SC4501  2SC4501L  
2SC4501S PDF
Simtek
Simtek Corporation
U634H256SC45G1 PowerStore 32K x 8 nvSRAM

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 μF capacitor.

Features
□ High-performance CMOS nonvolatile static RAM 32768 x 8 bits
□ 25, 35 and 45 ns Access Times
□ 10, 15 and 20 ns Output Enable
□ Access Times
□ ICC = 15 mA typ. at 200 ns Cycle Time
□ Automatic STORE to EEPROM on Power Down using external capacitor
□ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
□ Automatic STORE Timing
□ 106 STORE cycles to EEPROM
□ 100 years data retention in EEPROM
□ Automatic RECALL on Power Up
□ Software RECALL Initiation (RECALL Cycle Time < 20 μs)
□ Unlimited RECALL cycles from EEPROM
□ Single 5 V ± 10 % Operation
□ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40 to125 °C(only 35 ns)
□ QS 9000 Quality Standard
□ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
□ RoHS compliance and Pb- free
□ Package: SOP32 (300 mil)

 


other parts : U634H256  U634H256SA25  U634H256SA25G1  U634H256SA35  U634H256SA35G1  U634H256SA45  U634H256SA45G1  U634H256SC25  U634H256SC25G1  U634H256SC35  
U634H256SC45G1 PDF
Simtek
Simtek Corporation
U634H256SC45 PowerStore 32K x 8 nvSRAM

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 μF capacitor.

Features
□ High-performance CMOS nonvolatile static RAM 32768 x 8 bits
□ 25, 35 and 45 ns Access Times
□ 10, 15 and 20 ns Output Enable
□ Access Times
□ ICC = 15 mA typ. at 200 ns Cycle Time
□ Automatic STORE to EEPROM on Power Down using external capacitor
□ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
□ Automatic STORE Timing
□ 106 STORE cycles to EEPROM
□ 100 years data retention in EEPROM
□ Automatic RECALL on Power Up
□ Software RECALL Initiation (RECALL Cycle Time < 20 μs)
□ Unlimited RECALL cycles from EEPROM
□ Single 5 V ± 10 % Operation
□ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40 to125 °C(only 35 ns)
□ QS 9000 Quality Standard
□ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
□ RoHS compliance and Pb- free
□ Package: SOP32 (300 mil)

 


other parts : U634H256  U634H256SA25  U634H256SA25G1  U634H256SA35  U634H256SA35G1  U634H256SA45  U634H256SA45G1  U634H256SC25  U634H256SC25G1  U634H256SC35  
U634H256SC45 PDF
Hitachi
Hitachi -> Renesas Electronics
2SC4501 Silicon NPN Epitaxial

Application
   High gain amplifier and medium speed switching


other parts : 2SC4501S  2SC4501L  
2SC4501 PDF
Zentrum
Zentrum Mikroelektronik Dresden AG
U632H16SC45 PowerStore 2K x 8 nvSRAM

Description
The U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.
The U632H16 is a fast s tatic RAM (25, 35, 45 ns), w ith a nonvolatile electr ically erasable PROM (EEPROM) element incorporated n each static memory cell. The SRAM can be read and wri tten an unlimited number of ti mes, while ndependent nonvolatile data resides in EEPROM. Data transfers rom the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor. Transfers from he EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ ICC = 15 mA at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor
❐ Hardware or Software initiated STORE
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL I nitiation
   (RECALL Cycle Time < 20µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classific ation see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mi)
                 SOP28 (300 mil)

 


other parts : U632H16  U632H16DC25  U632H16DC35  U632H16DC45  U632H16DK25  U632H16DK35  U632H16DK45  U632H16D1C25  U632H16D1C35  U632H16D1C45  
U632H16SC45 PDF
Semtech
Semtech Corporation
ST2SC458 NPN Silicon Epitaxial Planar Transistor

Low frequency amplifier applications.

The transistor is subdivided into three group, B, C and D according to its DC current gain.
On special request, these transistors can be manufactured in differentpin configurations.


other parts : 2SC458  
ST2SC458 PDF
Zentrum
Zentrum Mikroelektronik Dresden AG
UL634H256BSC45 Low Voltage PowerStore32K x 8 nvSRAM

Description
The UL635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

Features
High-performance CMOS non-volatile static RAM 32768 x 8 bits
35 and 45 ns Access Times
15 and 20 ns Output Enable Access Times
ICC= 8 mA typ. at 200 ns Cycle Time
Automatic STORE to EEPROM on Power Down using external capacitor
Software initiated STORE
Automatic STORE Timing
106 STORE cycles to EEPROM
100 years data retention in EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from EEPROM
Wide voltage range: 2.7 ... 3.6 V (3.0 ... 3.6 V for 35 ns type)
Operating temperature range:
  0 to 70 °C
  -40 to 85 °C
QS 9000 Quality Standard
ESD characterization according (MIL STD 883C M3015.7-HBM)
Package: SOP28 (330 mil)
 


other parts : UL634H256BSC55  UL634H256BSK45  UL634H256BSK55  UL634H256BTC45  UL634H256BTC55  UL634H256BTK45  UL634H256BTK55  UL634H256SC45  UL634H256SC55  UL634H256SK45  
UL634H256BSC45 PDF

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