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NTE17

  

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NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE17 Integrated Circuit TV Tuner Band Selector NTE17 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE17 Silicon complementary PNP transistor. Low noise, general purpose amplifier. NTE17 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE176 Germaniun PNP Transistor Audio Power Amplifier NTE176 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE175 Silicon Complementary Transistors High Voltage, Medium Power Switch

Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


other parts : NTE38  
NTE175 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE177 General Purpose Silicon Rectifier

Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

 

NTE177 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch

Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions.

Features:
• Low Collector–Emitter Saturation Voltage:
   VCE(sat) = 0.5V (Max) @ IC = 5A

 

NTE179 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE170 Single Phase Bridge Rectifier 2.0 Amp

Features:
• Ideal for Printed Circuit Board
• Surge Overload Rating: 50A (Peak)

 


other parts : NTE166  NTE167  NTE168  NTE169  
NTE170 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE171 Silicon NPN Transistor Audio/Video Amplifier

Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

Features:
• High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
• Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V

 

NTE171 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE177 General Purpose Silicon Rectif NTE177 PDF
NTE-Electronic
NTE-ElectronicNTE-Electronic
NTE179 Germanium PNP Transistor Audio NTE179 PDF

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