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Manufacturer Part no Description View
NJSEMI
New Jersey Semiconductor
42HFR20M STANDARD RECOVERY DIODES

Features
■ High surge current capability
■ Stud cathode and stud anode version
■ Leaded version available
■ Types up to 1600V VRRM

Typical Applications
■ Battery charges
■ Converters
■ Power supplies
■ Machine tool controls
■ Welding

 


other parts : 40HF10  40HF  40HFR  40HF100  40HF100M  40HF10M  40HF120  40HF120M  40HF140  40HF140M  
42HFR20M PDF
Vishay
Vishay Semiconductors
16FR20MS05 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02  12F100MS05  12F100S02  12F100S05  12F10MS02  12F10MS05  12F10S02  12F10S05  12F20MS02  12F20MS05  
16FR20MS05 PDF
Vishay
Vishay Semiconductors
SIHFR210T Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210  IRFR210PBF  IRFR210TR  IRFR210TRL  IRFR210TRLPBF  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  
SIHFR210T PDF
KERSEMI
Kersemi Electronic Co., Ltd.
SIHFR210TL Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210  IRFR210PBF  IRFR210TR  IRFR210TRL  IRFR210TRLPBF  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  
SIHFR210TL PDF
IXYS
IXYS CORPORATION
IXFR24N50 HiPerFET™ Power MOSFETs ISOPLUS247™

(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on)HDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)


other parts : IXFR26N50  
IXFR24N50 PDF
IXYS
IXYS CORPORATION
IXFR26N50 HiPerFET™ Power MOSFETs ISOPLUS247™

(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on)HDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)


other parts : IXFR24N50  
IXFR26N50 PDF
Vishay
Vishay Semiconductors
12FR20S05 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02  12F100MS05  12F100S02  12F100S05  12F10MS02  12F10MS05  12F10S02  12F10S05  12F20MS02  12F20MS05  
12FR20S05 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRFR210TR Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210  IRFR210PBF  IRFR210TRL  IRFR210TRLPBF  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  SIHFR210-E3  
IRFR210TR PDF
Vishay
Vishay Semiconductors
IRFR210 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210PBF  IRFR210TR  IRFR210TRL  IRFR210TRLPBF  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  SIHFR210-E3  
IRFR210 PDF
GoodArk
GOOD-ARK1
40HFR20 POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes

Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Types up to 1600V VRRM

Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls


other parts : 40HF20M  40HFR20M  
40HFR20 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRFR210TRLPBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210  IRFR210PBF  IRFR210TR  IRFR210TRL  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  SIHFR210-E3  
IRFR210TRLPBF PDF
KERSEMI
Kersemi Electronic Co., Ltd.
SIHFR210-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210  IRFR210PBF  IRFR210TR  IRFR210TRL  IRFR210TRLPBF  IRFR210TRPBF  IRFR210TRR  IRFU210  IRFU210PBF  SIHFR210  
SIHFR210-E3 PDF

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