datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  EM636165 Datasheet

EM636165

  

Datasheet PDF

Match, Like EM636165
Start with EM636165* EM636165-* EM636165B* EM636165T* EM636165V*
End N/A
Included N/A

View Details

Manufacturer Part no Description View
Etron
EtronEtron
EM636165 1Mega x 16 Synchronous DRAM (SDRAM)


other parts : EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  EM636165TS-10  
EM636165 PDF
Etron
EtronEtron
EM636165BE 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  EM636165TS-10  
EM636165BE PDF
Etron
EtronEtron
EM636165TS 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS-10  
EM636165TS PDF
Etron
EtronEtron
EM636165VE-7 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165VE-7 PDF
Etron
EtronEtron
EM636165VE-5 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165VE-5 PDF
Etron
EtronEtron
EM636165TS-5 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165TS-5 PDF
Etron
EtronEtron
EM636165TS-6 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165TS-6 PDF
Etron
EtronEtron
EM636165TS-8 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165TS-8 PDF
Etron
EtronEtron
EM636165TS-7 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165TS-7 PDF
Etron
EtronEtron
EM636165VE-8 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications

Features
· Fast access time: 4.5/5/5/5.5/6.5/7.5 ns
· Fast clock rate: 200/183/166/143/125/100 MHz
· Self refresh mode: standard and low power
· Internal pipelined architecture
· 512K word x 16-bit x 2-bank
· Programmable Mode registers
   - CAS# Latency: 1, 2, or 3
   - Burst Length: 1, 2, 4, 8, or full page
   - Burst Type: interleaved or linear burst
   - Burst stop function
· Individual byte controlled by LDQM and UDQM
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms
· CKE power down mode
· JEDEC standard +3.3V±0.3V power supply
· Interface: LVTTL
· 50-pin 400 mil plastic TSOP II package
· 60-ball, 6.4x10.1mm VFBGA package
· Lead Free Package available for both TSOP II and VFBGA

 


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165VE-8 PDF

1

234

New and Popular Datasheet

LM317  PN2222A  1N4007  LM324N  BAT43WS  LC78681KE-L  FSDL321  FSDM0265RN  FSDM0365RN  SI3454  HPA72R  2N5068  UT06P03  PE7058-1  VS-MBRB4045CTPBF  LMC6681  CMST2222A_10  EP3C16F484I7N  PCA82C251T  TLSE157AP  TLSE157P  PHB45NQ10T  BAT43W  STPR850DF  IRF3706PBF  IRF7466PbF  UF4004GP  TLSE27CF  UF4004G  TLSE27C  TLSE20TP  UF4004  TLRE20T  ADS62P25  3.0SMCJ120CA  STK672-532  MJ4502  K1589-T1B  2SC4668  A1641  5962H9475402QLA  4243  KMZ10C  PE3291-15  M41ST87WMX6TR  2N2920DCSM  2N2920  SB340  TPS7A1601EVM-046  1N4148WS  NCP5666  BSS87  APL1085-33FC-TU  IRF245  TDA2030A  Part List  Manufacturers List 
  


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2017  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]