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Manufacturer Part no Description View
NJSEMI
NJSEMINJSEMI
BLW32 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW32 PDF
ASI
ASIASI
BLW96 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30


other parts : ASI10826  
BLW96 PDF
Philips
PhilipsPhilips
BLW85 HF/VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized andis guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
Matched hFEgroups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

 

BLW85 PDF
ASI
ASIASI
BLW76 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.

FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System

 

BLW76 PDF
Philips
PhilipsPhilips
BLW32 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW32 PDF
NJSEMI
NJSEMINJSEMI
BLW34 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW34 PDF
Philips
PhilipsPhilips
BLW30 VHF power transistor

DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud.

FEATURES
• Emitter-ballasting resistors for an optimum temperature profile
• Excellent reliability
• Withstands full load mismatch.

BLW30 PDF
Philips
PhilipsPhilips
BLW34 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW34 PDF
Philips
PhilipsPhilips
BLW98 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV
transposers and transmitters in band IV-V, as well as for driver stages in tube systems.

BLW98 PDF
ASI
ASIASI
BLW85 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW85is Designed for Class C Amplifier Applications in VHF Mobile Radios.

FEATURES:
• PG= 9.5 dB Typ. at 40 W /175 MHz
• ηC= 60% Typ. at 40 W /175 MHz
• Omnigold™ Metalization System

BLW85 PDF

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