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Manufacturer Part no Description View
NJSEMI
NJSEMINJSEMI
BLW32 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW32 PDF
ASI
ASIASI
BLW76 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.

FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System

 

BLW76 PDF
NJSEMI
NJSEMINJSEMI
BLW34 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW34 PDF
ASI
ASIASI
BLW98 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW98is Designed for use in UHF amplifier applications up to 860 MHz.

FEATURES:
• PG= 16.5 dB Typical at 860 MHz
• Common Emitter
• Omnigold™ Metallization System


other parts : ASI10762  
BLW98 PDF
ASI
ASIASI
BLW34 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW34 is Designed for use in UHF amplifiers up to 860 MHz.

FEATURES:
• PG = 10.2 dB Typical at 860 MHz
• Omnigold™ Metallization System

 

BLW34 PDF
Philips
PhilipsPhilips
BLW29 VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed

BLW29 PDF
ASI
ASIASI
BLW86 NPN SILICON RF POWER TRANSISTOR

The ASI BLW86is Designed for Class C, 28 V High Band Applications up to 175 MHz.

 

FEATURES:
• Common Emitter
• PG= 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System

BLW86 PDF
ASI
ASIASI
BLW96 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30


other parts : ASI10826  
BLW96 PDF
Philips
PhilipsPhilips
BLW85 HF/VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized andis guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
Matched hFEgroups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

 

BLW85 PDF
Philips
PhilipsPhilips
BLW32 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

BLW32 PDF

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