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BD80

  

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Match, Like BD800 BD801 BD802 BD807 BD808 BD809
Start with BD800* BD801* BD802* BD807* BD808* BD809*
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Manufacturer Part no Description View
Iscsemi
Inchange Semiconductor
BD809 Silicon NPN Power Transistors

DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

BD809 PDF
Savantic
SavantIC Semiconductor
BD809 Silicon NPN Power Transistors

DESCRIPTION
··With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

BD809 PDF
Motorola
Motorola => Freescale
BD809 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

• DC Current Gain —
   hFE = 30 (Min) @ IC = 2.0 Adc

 


other parts : BD810  
BD809 PDF
Intersil
Intersil
BD800 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795  BD796  BD797  BD798  BD799  BD801  BD802  
BD800 PDF
Intersil
Intersil
BD802 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795  BD796  BD797  BD798  BD799  BD800  BD801  
BD802 PDF
Intersil
Intersil
BD801 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795  BD796  BD797  BD798  BD799  BD800  BD802  
BD801 PDF
ON-Semiconductor
ON Semiconductor
BD809 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 


other parts : BD809G  BD810  BD810G  
BD809 PDF
Iscsemi
Inchange Semiconductor
BD807 Silicon NPN Power Transistor

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

BD807 PDF
Iscsemi
Inchange Semiconductor
BD800 POWER TRANSISTORS PNP SILICON

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

BD800 PDF
Iscsemi
Inchange Semiconductor
BD800 POWER TRANSISTORS PNP SILICON

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

BD800 PDF

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