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7N05L

  

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ST-Microelectronics
ST-MicroelectronicsST-Microelectronics
STD17N05LT4 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX


other parts : STD17N05L  STD17N05L-1  STD17N06L  STD17N06L-1  STD17N06LT4  
STD17N05LT4 PDF
ST-Microelectronics
ST-MicroelectronicsST-Microelectronics
STD17N05L-1 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.065 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX


other parts : STD17N05L  STD17N05LT4  STD17N06L  STD17N06L-1  STD17N06LT4  
STD17N05L-1 PDF

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