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6A10

  

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Manufacturer Part no Description View
Spansion
SpansionSpansion
S29GL016A10BFIW20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BFIW20 PDF
Spansion
SpansionSpansion
S29GL016A10FFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIR12 PDF
Spansion
SpansionSpansion
S29GL016A10BAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  S29GL016A10BAIR13  
S29GL016A10BAI012 PDF
Spansion
SpansionSpansion
S29GL016A10TFI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFI012 PDF
Spansion
SpansionSpansion
S29GL016A10TFIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFIR10 PDF
Spansion
SpansionSpansion
S29GL016A10FFIW10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIW10 PDF
Spansion
SpansionSpansion
S29GL016A10BAIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR12  S29GL016A10BAIR13  
S29GL016A10BAIR10 PDF
Spansion
SpansionSpansion
S29GL016A10FFIW23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIW23 PDF
Spansion
SpansionSpansion
S29GL016A10BAIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BAIR23 PDF
Spansion
SpansionSpansion
S29GL016A10TFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFIR23 PDF

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