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6A10

  

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Included *26A10* *06A10* *P6A10* *86A10* *16A10* *56A10* *A6A10* *76A10* *96A10*

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Manufacturer Part no Description View
Spansion
SpansionSpansion
S29GL016A10FFIW20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIW20 PDF
Spansion
SpansionSpansion
S29GL016A10BAIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BAIR20 PDF
KOA
KOAKOA
MOSX5CT26A103F reduced size metal oxide power type leaded resistor

reduced size metal oxide power type leaded resistor

features
•Coated with UL94V0 equivalent flameproof material
•Suitable for automatic machine insertion
•Marking: Pink body color with color-coded bands or alpha-numeric black marking
•Products with lead-free terminations meet EU RoHS and China RoHS requirements

 


other parts : MOS  MOS1  MOS1/2  MOS1/2CGT4A103  MOS1/2CGT4A103F  MOS1/2CGT4A103G  MOS1/2CGT4A103J  MOS1/2CGT4R103  MOS1/2CGT4R103F  MOS1/2CGT4R103G  
MOSX5CT26A103F PDF
Spansion
SpansionSpansion
S29GL016A10TFIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFIR20 PDF
Spansion
SpansionSpansion
S29GL016A10FAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FAI012 PDF
Kemet
KemetKemet
B45006A1066M208 Tantalum Chip Capacitors SpeedPower, Low ESR

Tantalum Chip Capacitors
SpeedPower, Low ESR

Features
Wide variety of Low ESR values
High ripple current capability
High volumetric efficiency
Excellent solderability
Stable temperature and frequency characteristics
Low leakage current, low dissipation factor
Low self-inductance
High resistance to shock and vibration
Suitable for use without series resistor(special operating conditions recommended)


other parts : B45002A1066K208  B45002A1066M208  B45002A1069K208  B45002A1069M208  B45002A1566K208  B45002A1566M208  B45002A1569K208  B45002A1569M208  B45002A2256K508  B45002A2256M508  
B45006A1066M208 PDF
Kemet
KemetKemet
B45016A1069K258 Tantalum Chip Capacitors SpeedPower, Low ESR

Tantalum Chip Capacitors
SpeedPower, Low ESR

Features
Wide variety of Low ESR values
High ripple current capability
High volumetric efficiency
Excellent solderability
Stable temperature and frequency characteristics
Low leakage current, low dissipation factor
Low self-inductance
High resistance to shock and vibration
Suitable for use without series resistor(special operating conditions recommended)


other parts : B45002A1066K208  B45002A1066M208  B45002A1069K208  B45002A1069M208  B45002A1566K208  B45002A1566M208  B45002A1569K208  B45002A1569M208  B45002A2256K508  B45002A2256M508  
B45016A1069K258 PDF
Spansion
SpansionSpansion
S29GL016A10TAI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TAI010 PDF
Spansion
SpansionSpansion
S29GL016A10BAIW13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BAIW13 PDF
KOA
KOAKOA
MOS5CT26A103G reduced size metal oxide power type leaded resistor

reduced size metal oxide power type leaded resistor

features
•Coated with UL94V0 equivalent flameproof material
•Suitable for automatic machine insertion
•Marking: Pink body color with color-coded bands or alpha-numeric black marking
•Products with lead-free terminations meet EU RoHS and China RoHS requirements

 


other parts : MOS  MOS1  MOS1/2  MOS1/2CGT4A103  MOS1/2CGT4A103F  MOS1/2CGT4A103G  MOS1/2CGT4A103J  MOS1/2CGT4R103  MOS1/2CGT4R103F  MOS1/2CGT4R103G  
MOS5CT26A103G PDF

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