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Kemet
KemetKemet
B45016A1059M508 Tantalum Chip Capacitors SpeedPower, Low ESR


other parts : B45002A1066K208  B45002A1066M208  B45002A1069K208  B45002A1069M208  B45002A1566K208  B45002A1566M208  B45002A1569K208  B45002A1569M208  B45002A2256K508  B45002A2256M508  
B45016A1059M508 PDF
Spansion
SpansionSpansion
S29GL016A10FFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIR12 PDF
Spansion
SpansionSpansion
S29GL016A10BAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  S29GL016A10BAIR13  
S29GL016A10BAI012 PDF
KOA
KOAKOA
MOS1CT26A103F reduced size metal oxide power type leaded resistor

reduced size metal oxide power type leaded resistor

features
•Coated with UL94V0 equivalent flameproof material
•Suitable for automatic machine insertion
•Marking: Pink body color with color-coded bands or alpha-numeric black marking
•Products with lead-free terminations meet EU RoHS and China RoHS requirements

 


other parts : MOS  MOS1  MOS1/2  MOS1/2CGT4A103  MOS1/2CGT4A103F  MOS1/2CGT4A103G  MOS1/2CGT4A103J  MOS1/2CGT4R103  MOS1/2CGT4R103F  MOS1/2CGT4R103G  
MOS1CT26A103F PDF
Spansion
SpansionSpansion
S29GL016A10TFI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFI012 PDF
Spansion
SpansionSpansion
S29GL016A10BFIW20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BFIW20 PDF
Spansion
SpansionSpansion
S29GL016A10FFI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFI010 PDF
KOA
KOAKOA
MOSX1/2CT26A103 reduced size metal oxide power type leaded resistor

reduced size metal oxide power type leaded resistor

features
•Coated with UL94V0 equivalent flameproof material
•Suitable for automatic machine insertion
•Marking: Pink body color with color-coded bands or alpha-numeric black marking
•Products with lead-free terminations meet EU RoHS and China RoHS requirements

 


other parts : MOS  MOS1  MOS1/2  MOS1/2CGT4A103  MOS1/2CGT4A103F  MOS1/2CGT4A103G  MOS1/2CGT4A103J  MOS1/2CGT4R103  MOS1/2CGT4R103F  MOS1/2CGT4R103G  
MOSX1/2CT26A103 PDF
Spansion
SpansionSpansion
S29GL016A10TAIW10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TAIW10 PDF
Spansion
SpansionSpansion
S29GL016A10BFIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
   + 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
  + 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
  + 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
  – 18 mA typical active read current
  – 50 mA typical erase/program current
  – 1 µA typical standby mode current
„Package options
  – 48-pin TSOP
  – 56-pin TSOP
  – 64-ball Fortified BGA
  – 48-ball fine-pitch BGA
  – 56-ball fine pitch BGA (MCP-compatible for cellular handsets)


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BFIR13 PDF

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