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Manufacturer Part no Description View
Spansion
SpansionSpansion
S29GL016A10FAI020 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FAI020 PDF
AVX
AVXAVX
VC040226A101WP AVX Multilayer Ceramic Transient Voltage Suppressors

GENERAL DESCRIPTION
The AVX TransGuard® Transient Voltage Suppressors (TVS) with unique high-energy multilayer construction represents state-of-the-art overvoltage circuit protection. Monolithic multilayer construction provides protection from voltage transients caused by ESD, lightning, NEMP, inductive switch ing, etc.  True surface mount product is provided in EIA industry standard packages. Thru-hole components are supplied as conformally coated axial


other parts : VC040203A100WP  VC040203A101WP  VC040203A121WP  VC040203A150WP  VC040203A200WP  VC040203A250WP  VC040203A300WP  VC040203A390WP  VC040203A400WP  VC040203A500WP  
VC040226A101WP PDF
Spansion
SpansionSpansion
S29GL016A10FFIW23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FFIW23 PDF
Spansion
SpansionSpansion
S29GL016A10BAIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10BAIR23 PDF
Micron
MicronMicron
N25Q256A13ESF40G 3V, 256Mb: Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Description
The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It


other parts : N25Q256A  N25Q256A13E1240E  N25Q256A13E1240F  N25Q256A13E1240G  N25Q256A13E12A0E  N25Q256A13E12A0F  N25Q256A13E12A0G  N25Q256A13E12H0E  N25Q256A13E12H0F  N25Q256A13E12H0G  
N25Q256A13ESF40G PDF
Spansion
SpansionSpansion
S29GL016A10TFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFIR23 PDF
Micron
MicronMicron
N25Q256A13ESFH0F 3V, 256Mb: Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Description
The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It


other parts : N25Q256A  N25Q256A13E1240E  N25Q256A13E1240F  N25Q256A13E1240G  N25Q256A13E12A0E  N25Q256A13E12A0F  N25Q256A13E12A0G  N25Q256A13E12H0E  N25Q256A13E12H0F  N25Q256A13E12H0G  
N25Q256A13ESFH0F PDF
Spansion
SpansionSpansion
S29GL016A10TFIW22 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TFIW22 PDF
Spansion
SpansionSpansion
S29GL016A10FAIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10FAIR13 PDF
Spansion
SpansionSpansion
S29GL016A10TAI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory featuring 200 nm MirrorBit Process Technology

General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics
Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region


other parts : S29GL-A  S29GL016A  S29GL016A10BAI010  S29GL016A10BAI012  S29GL016A10BAI013  S29GL016A10BAI020  S29GL016A10BAI022  S29GL016A10BAI023  S29GL016A10BAIR10  S29GL016A10BAIR12  
S29GL016A10TAI013 PDF

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