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2SC51

  

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JMNIC
JMNICJMNIC
2SC515 Silicon NPN Power Transistors

DESCRIPTION
·With TO-66 package
·High breakdown voltage 

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

2SC515 PDF
Savantic
SavanticSavantic
2SC515 Silicon NPN Power T ransistors

DESCRIPTION                                    
·With TO-66 package
·High breakdown voltage

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

2SC515 PDF
Iscsemi
IscsemiIscsemi
2SC5143 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3P(H)IS package
·High speed 
·High voltage
·Low saturation voltage
·Bult-in damper diode

APPLICATIONS
·Horizontal deflection output for high  resolution display,colorTV
·High speed switching applications


other parts : C5143  
2SC5143 PDF
JMNIC
JMNICJMNIC
2SC5100 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3PML package
·Complement to type 2SA1908

APPLICATIONS
·Audio and general purpose  

2SC5100 PDF
Toshiba
ToshibaToshiba
2SC5197 Silicon NPN Triple Diffused Type Transistor


other parts : C5197  
2SC5197 PDF
Toshiba
ToshibaToshiba
2SC5176 NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS

DC-DC CONVERTER APPLICATION

2SC5176 PDF
NEC
NECNEC
2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
   NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
   NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
   IC = 100 mA
• Supercompact Mini Mold Package

 


other parts : 2SC5195-T1  
2SC5195 PDF
Savantic
SavanticSavantic
2SC5150 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3P(H)IS package
·High speed 
·High voltage
·Low saturation voltage

APPLICATIONS
·Horizontal deflection output for high resolution display,colorTV
·High speed switching applications

2SC5150 PDF
Toshiba
ToshibaToshiba
2SC5122 Silicon NPN Triple Diffused Type Transistor

High-Voltage switching Applications


•  High breakdown voltage: VCEO= 400 V
•  Low saturation voltage:  VCE (sat)= 0.4 V (typ.) 
                                   (IC= 20 mA, IB= 0.5 mA)


other parts : C5122  
2SC5122 PDF
Hitachi
HitachiHitachi
2SC5139 Silicon NPN Epitaxial

Application
VHF / UHF wide band amplifier

Features
• High gain bandwidth product
    fT= 11 GHz typ
• High gain, low noise figure
  PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz


other parts : C5139  
2SC5139 PDF

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