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2SC51

  

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JMNIC
Quanzhou Jinmei Electronic
2SC515 Silicon NPN Power Transistors

DESCRIPTION
·With TO-66 package
·High breakdown voltage 

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

2SC515 PDF
Iscsemi
Inchange Semiconductor
2SC515 Silicon NPN Power Transistors

DESCRIPTION
• With TO-66 package
• High breakdown voltage

APPLICATIONS
• For use in line-operated color TV chroma output circuits and sound output circuits

2SC515 PDF
Savantic
SavantIC Semiconductor
2SC515 Silicon NPN Power T ransistors

DESCRIPTION                                    
·With TO-66 package
·High breakdown voltage

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

2SC515 PDF
ROHM
ROHM Semiconductor
2SC5112 Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE


other parts : 2SA1634  2SA1635  2SA1757  2SA1758  2SB1085  2SB1085A  2SB1269  2SB1286  2SB1287  2SB1290  
2SC5112 PDF
ROHM
ROHM Semiconductor
2SC5161 High voltage switching transistor (400V, 2A)

Features
1) Low VCE(sat).
   VCE(sat)=0.15V (Typ.)
   (IC/IB=1A/0.2A)
2) High breakdown voltage.
   VCEO=400V
3) Fast switching.
   tf ≤1.0µs (IC=0.8A)


other parts : C5161  2SC5161TL  C5161TL  2SC5161TLB  C5161TLB  
2SC5161 PDF
NEC
NEC => Renesas Technology
2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD

FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
   NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
   NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
   IC = 100 mA
• Compact Mini Mold Package
   EIAJ: SC-70


other parts : 2SC5193-T1  2SC5193-T2  C5193  C5193-T1  C5193-T2  
2SC5193 PDF
Hitachi
Hitachi -> Renesas Electronics
2SC5139 Silicon NPN Epitaxial

Application
VHF / UHF wide band amplifier

Features
• High gain bandwidth product
    fT= 11 GHz typ
• High gain, low noise figure
  PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz


other parts : C5139  
2SC5139 PDF
NXP
NXP Semiconductors.
2SC5107 RF Manual 16th edition

Application and design manual for High Performance RF products

 


other parts : 0510-50A  1011LD110A  1011LD110B  1014-12  1014-2  1014-6A  10502  10AM20  1617-35  1SS314  
2SC5107 PDF
ROHM
ROHM Semiconductor
2SC5116 Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE


other parts : 2SA1634  2SA1635  2SA1757  2SA1758  2SB1085  2SB1085A  2SB1269  2SB1286  2SB1287  2SB1290  
2SC5116 PDF
ROHM
ROHM Semiconductor
2SC5147 (2SC4849/2SC5147)High Voltage Switching Transistor (Power Supply)/ Medium Power Transistor(Chroma Output)


other parts : 2SC4849  C4849  C5147  
2SC5147 PDF
ROHM
ROHM Semiconductor
2SC5113 Epitaxial Planar NPN Silicon Transistor

Epitaxial Planar NPN Silicon Transistor

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE


other parts : 2SA1634  2SA1635  2SA1757  2SA1758  2SB1085  2SB1085A  2SB1269  2SB1286  2SB1287  2SB1290  
2SC5113 PDF
Kexin
KEXIN Industrial
2SC5161 High Voltage Switching Transistor

Features
● Low VCE(sat).
   VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A
● High breakdown voltage.VCEO = 400V
● Fast switching.tr = 1.0ìs,IC = 0.8A
● NPN silicon transistor


other parts : C5161  
2SC5161 PDF

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