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2SC36

  

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Start with 2SC360* 2SC361* 2SC362* 2SC363* 2SC364* 2SC365* 2SC366* 2SC367* 2SC368* 2SC369*
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ETC
ETCETC
2SC364 NPN Transistor / TO98-1

Maximum collector power dissipation (Pc) : 0.2W

Maximum collector-base voltage : 25V

Maximum collector-emitter voltage : 0V

Maximum emitter-base voltage : 5V

Maximum collector current : 0.04A

Collector capacitance : 6 pF

Package of 2SC364 transistor: TO98-1

2SC364 PDF
ETC
ETCETC
2SC368 Si NPN Lo-Pwr BJT Transistors

TO 18 Package

Maximum collector power dissipation : 250mW

Maximum collector-base voltage : 25V

Maximum collector-emitter voltage : V: 25V

Maximum collector current : 100mA

http://www.datasheets360.com/pdf/-7139485327642560021

2SC368 PDF
Savantic
SavanticSavantic
2SC3693 Silicon NPN Power Transistors

Silicon NPN Power Transistors

DESCRIPTION
· With TO-220Fa package 
· Large current ,high speed
· Low collector saturation voltage  

APPLICATIONS
· For use in drivers such as DC/DC converters and actuators 


other parts : C3693  
2SC3693 PDF
Iscsemi
IscsemiIscsemi
2SC3678 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3PN package
·High voltage switching transistor


APPLICATIONS
·Switching regulator and general purpose applications


other parts : C3678  
2SC3678 PDF
NEC
NECNEC
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

2SC3603 PDF
SANYO
SANYOSANYO
2SC3656 (2SA1423/2SC3656) PNP/NPN Epitaxial Planar Silicon Transistors

Switching Applications( with Bias Resistor)

Use
Switching circuit, inverter circuit, interface circuit, driver circuit

Features
With bias resistor (R1 = 10kΩ , R2 = 10kΩ)


other parts : 2SA1423  A1423  C3656  
2SC3656 PDF
JMNIC
JMNICJMNIC
2SC3678 Silicon NPN Power Transistors

ESCRIPTION
·High Voltage Switching
·With TO-3PN package


APPLICATIONS
· Switching Regulator
· General Purpose


other parts : C3678  
2SC3678 PDF
Hitachi
HitachiHitachi
2SC3652 Silicon NPN Epitaxial

Application
High frequency amplifier


other parts : C3652  
2SC3652 PDF
Toshiba
ToshibaToshiba
2SC3606 SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

2SC3606 PDF
JMNIC
JMNICJMNIC
2SC3691 Silicon NPN Power Transistors

DESCRIPTION
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage

APPLICATIONS
·Designed for high speed and power switching applications


other parts : C3691  
2SC3691 PDF

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