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2SC36

  

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ETC
Unspecified
2SC364 NPN Transistor / TO98-1

Maximum collector power dissipation (Pc) : 0.2W

Maximum collector-base voltage : 25V

Maximum collector-emitter voltage : 0V

Maximum emitter-base voltage : 5V

Maximum collector current : 0.04A

Collector capacitance : 6 pF

Package of 2SC364 transistor: TO98-1

2SC364 PDF
Toshiba
Toshiba
2SC3621 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Color TV Vertitcal Deflection Output Applications
Color TV Class-B Sound Output Applications

• Large collector current and collector power dissipation capability
• Recommended for vertical deflection output and sound output
   applications for line-operated TVs.
• Complementary to 2SA1408.


other parts : C3621  
2SC3621 PDF
ON-Semiconductor
ON Semiconductor
2SC3649 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP

Features
• Adoption of FBET, MBIT processes
• High breakdown voltage and large current capacity
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


other parts : 2SA1419  2SA1419S-TD-E  2SA1419S-TD-H  2SA1419T-TD-E  2SA1419T-TD-H  2SC3649S-TD-E  2SC3649S-TD-H  2SC3649T-TD-E  2SC3649T-TD-H  
2SC3649 PDF
JMNIC
Quanzhou Jinmei Electronic
2SC3691 Silicon NPN Power Transistors

DESCRIPTION
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage

APPLICATIONS
·Designed for high speed and power switching applications


other parts : C3691  
2SC3691 PDF
Savantic
SavantIC Semiconductor
2SC3678 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3PN package
·High voltage switching transistor


APPLICATIONS
·Switching regulator and general purpose applications


other parts : C3678  
2SC3678 PDF
Toshiba
Toshiba
2SC3621_1997 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS.
COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

• Large Collector Current and Collector Power Dissipation Capability
• Recommended for Vert. Deflection Output and Sound Output
   Applications for Line Operated TV.
• Complementary to 2SA1408.


other parts : C3621_1997  
2SC3621 PDF
NEC
NEC => Renesas Technology
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

2SC3603 PDF
JMNIC
Quanzhou Jinmei Electronic
2SC3685 Silicon NPN Power Transistors

DESCRIPTION
• With TO-3PN package
• High breakdown voltage
• High reliability
• Fast speed

APPLICATIONS
• Ultrahigh-definition CRT display horizontal
   deflection output applications


other parts : C3685  
2SC3685 PDF
Renesas
Renesas Electronics
2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

FEATURES
● High hFE  hFE = 800 to 3200

2SC3617 PDF
NEC
NEC => Renesas Technology
2SC3623 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING

FEATURES
• High hFE:
   hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
• Low VCE(sat):
   VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
• High VEBO:
   VEBO: 12 V (2SC3623)
   VEBO: 15 V (2SC3623A)


other parts : 2SC3623-T  2SC3623-T/JM  2SC3623A  2SC3623A-T  2SC3623A-T/JM  2SC3623AK  C3623  C3623A  
2SC3623 PDF
Kexin
KEXIN Industrial
2SC3617 NPN Silicon Epitaxia

Features
● World standard miniature package.
● High hFE hFE=800 to 1600.

2SC3617 PDF
Toshiba
Toshiba
2SC3606 SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

2SC3606 PDF

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