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2222A

  

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UTC
UTCUTC
MMBT2222A-AE3-R NPN General Purpose Amplifier

„ FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.


other parts : MMBT2222A  MMBT2222A-AN3-R  MMBT2222AL-AE3-R  MMBT2222AL-AN3-R  
MMBT2222A-AE3-R PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
PN2222ARLRA NPN Silicon General Purpose Transistors

Features
•Pb−Free Packages are Available


other parts : PN2222  PN2222A  PN2222AG  PN2222ARLRAG  PN2222ARLRM  PN2222ARLRMG  PN2222ARLRPG  PN2222G  
PN2222ARLRA PDF
Semelab
SemelabSemelab
2N2222AC1 SILICON PLANAR EPITAXIAL NPN TRANSISTOR

•  High Speed Saturated Switching
•  Hermetic Surface Mounted Package.
•  Ideally suited for High Speed Switching and General Purpose Applications
•  Screening Options Available

2N2222AC1 PDF
Microsemi
MicrosemiMicrosemi
2N2222AXC-1 SWITCHING TRANSISTOR NPN SILICON

FEATURES:
  ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
  AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
  GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
  LOW VCE(sat): .3V @ IC = 150 mAdc


other parts : 2N2222AB  2N2222AB-1  2N2222ABC  2N2222ABC-1  2N2222ABS  2N2222ABS-1  2N2222AD  2N2222AD-1  2N2222ADC  2N2222ADC-1  
2N2222AXC-1 PDF
PanJit
PanJitPanJit
MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 40 Volts POWER 225 mWatts

FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
• In compliance with EU RoHS 2002/95/EC directives

 

MMBT2222ATB PDF
UTC
UTCUTC
PZT2222AL-AA3-R NPN GENERAL PURPOSE AMPLIFIER

FEATURES
* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.


other parts : PZT2222A  PZT2222A-AA3-R  PZT2222AG-AA3-R  
PZT2222AL-AA3-R PDF
Microsemi
MicrosemiMicrosemi
2N2222AB-1 SWITCHING TRANSISTOR NPN SILICON

FEATURES:
  ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
  AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
  GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
  LOW VCE(sat): .3V @ IC = 150 mAdc


other parts : 2N2222AB  2N2222ABC  2N2222ABC-1  2N2222ABS  2N2222ABS-1  2N2222AD  2N2222AD-1  2N2222ADC  2N2222ADC-1  2N2222ADIE  
2N2222AB-1 PDF
Willas
WillasWillas
MMBT2222AWT1 General Purpose Transistor

NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.
compliance with RoHS requirements. We declare that the material of product

 

MMBT2222AWT1 PDF
Diodes
DiodesDiodes
MMBT2222AT-7 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT2907AT)
• Ultra-Small Surface Mount Package

 

MMBT2222AT-7 PDF
MCC
MCCMCC
MMBT2222A-TP NPN General Purpose Amplifier

Features
•  Surface Mount SOT-23 Package
•  Capable of 350mWatts of Power Dissipation, IC=600mA
•  Operating Junction Temperature: -55°C to +150°C
•  Storage Temperature: -55°C to +150°C
•  Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1
• Marking:1P


other parts : MMBT2222A  
MMBT2222A-TP PDF

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