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165TS-7G

  

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Etron
Etron Technology
EM636165TS-7G 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G  EM636165BE-7LG  EM636165BE-8G  EM636165TS  
EM636165TS-7G PDF
Etron
Etron Technology
EM639165TS-7G 8Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally
configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses
start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a


other parts : EM639165  EM639165TS  EM639165TS-6G  EM639165TS-6LG  EM639165TS-7LG  
EM639165TS-7G PDF

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