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Spansion
Spansion Inc.
S29GL032M10FCCR10 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCCR10 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR32 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCIR32 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
MUR1010FCT Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 400 Volts Forward Current 10.0 Amperes

Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 400 Volts Forward Current 10.0 Amperes

Features
‹Low power loss, high efficiency
‹Low forward voltage, high current capability
‹High surge capacity
‹Super fast recovery times, high voltage

 

 


other parts : MUR1005FCT  MUR10100  MUR1015FCT  MUR1020FCT  MUR1030FCT  MUR1040FCT  
MUR1010FCT PDF
Spansion
Spansion Inc.
S29GL032M10FCCR23 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCCR23 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR40 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR40 PDF
General
General Semiconductor
UGF10FCT ULTRAFAST SOFT RECOVERY RECTIFIER

Reverse Voltage - 300 to 400 Volts Forward Current - 10.0 Amperes

FEATURES
♦ Plastic package has Underwriters Laboratories
   Flammability Classification 94V-0
♦ Ideally suited for free wheeling diode power factor correction applications
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Optimized to reduce switching losses
♦ High temperature soldering guaranteed: 250°C, 0.25" (6.35mm) from case for 10 seconds
♦ Glass passivated chip junction

 


other parts : UGF10GCT  
UGF10FCT PDF
Spansion
Spansion Inc.
S29GL032M10FCCR42 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCCR42 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR50 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 um MirrorBit process technology
■ SecSi™ (Secured Silicon) Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256Mb: 512 32 Kword (64 Kbyte) sectors
   — 128Mb: 256 32 Kword (64 Kbyte) sectors
   — 64Mb (uniform sector models): 128 32 Kword (64 Kbyte) sectors or 128 32 Kword sectors
   — 64Mb (boot sector models): 127 32 Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32Mb (uniform sector models): 64 32Kword (64 Kbyte) sectors of 64 32Kword sectors
   — 32Mb (boot sector models): 63 32Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128Mb, 64Mb, 32Mb), 100 ns access time (256Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128Mb, 64Mb, 32Mb)
   — 30 ns page read times (256Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL0128M10  S29GL0128M90  S29GL0256M10  S29GL0256M11  S29GL032M10  S29GL032M10BAIR50  S29GL032M10BAIR52  S29GL032M10BAIR53  S29GL032M10BAIR60  S29GL032M10BAIR62  
S29GL032M10FCIR50 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR53 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR53 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR02 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR02 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR63 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 um MirrorBit process technology
■ SecSi™ (Secured Silicon) Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256Mb: 512 32 Kword (64 Kbyte) sectors
   — 128Mb: 256 32 Kword (64 Kbyte) sectors
   — 64Mb (uniform sector models): 128 32 Kword (64 Kbyte) sectors or 128 32 Kword sectors
   — 64Mb (boot sector models): 127 32 Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32Mb (uniform sector models): 64 32Kword (64 Kbyte) sectors of 64 32Kword sectors
   — 32Mb (boot sector models): 63 32Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128Mb, 64Mb, 32Mb), 100 ns access time (256Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128Mb, 64Mb, 32Mb)
   — 30 ns page read times (256Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL0128M10  S29GL0128M90  S29GL0256M10  S29GL0256M11  S29GL032M10  S29GL032M10BAIR50  S29GL032M10BAIR52  S29GL032M10BAIR53  S29GL032M10BAIR60  S29GL032M10BAIR62  
S29GL032M10FCIR63 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR12 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCIR12 PDF

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