datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  10FC Datasheet

10FC

  

Datasheet PDF

Match, Like N/A
Start with N/A
End *-10FC *610FC *310FC *010FC *110FC *210FC *D10FC *M10FC *G10FC *B10FC *F10FC
Included *10FC-* *10FC2* *10FCC* *10FCD* *10FCI* *10FCL* *10FCS* *10FCT*
View Details    
Manufacturer Part no Description View
Spansion
Spansion Inc.
S29GL064M10FCIR00 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR00 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR52 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR52 PDF
PYRAMID
Semiconductor Corporation
P4C147-10FC ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM

DESCRIPTION
The P4C147 is a 4,096-bit ultra high speed static RAM organized as 4K x 1. The CMOS memory requires no clocks or refreshing, and have equal access and cycle times. Inputs are fully TTL-compatible. The RAM operates from a single 5V ± 10% tolerance power supply.
Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is utilized to reduce power consumption in both active and standby modes. In addition to very high performance, this device features latch-up protection and single-event-upset protection.
The P4C147 is available in 18 pin 300 mil DIP packages, an 18-pin CERPACK package, and 2 different LCC packages.

FEATURES
■ Full CMOS, 6T Cell
■ High Speed (Equal Access and Cycle Times)
   – 10/12/15/20/25 ns (Commercial)
   – 15/20/25/35 ns (Military)
■ Low Power Operation
   – 715 mW Active –10 (Commercial)
   – 550 mW Active –25 (Commercial)
   – 110 mW Standby (TTL Input)
   – 55 mW Standby (CMOS Input)
■ Single 5V ± 10% Power Supply
■ Separate Input and Output Ports
■ Three-State Outputs
■ Fully TTL Compatible Inputs and Outputs
■ Standard Pinout (JEDEC Approved)
   – 18 Pin 300 mil DIP
   – 18 Pin CERPACK
   – 18 Pin LCC (290 x 430 mils)
   – 18 Pin LCC (295 x 335 mils)


other parts : P4C147  P4C147-10CC  P4C147-10CM  P4C147-10CMB  P4C147-10DC  P4C147-10DM  P4C147-10DMB  P4C147-10FM  P4C147-10FMB  P4C147-10LC  
P4C147-10FC PDF
ETC2
Unspecified
FR2010FC FAST RECOVERY RECTIFIERS

[Diode Semiconductor Korea]

VOLTAGE RANGE: 100 --- 600 V
CURRENT: 20 A

FEATURES
◇ Low cost
◇ Diffused junction
◇ Low leakage
◇ Low forward voltage drop
◇ High current capability and similar solvents
◇ The plastic material carries U/L recognition 94V-0
◇ Easily cleaned with Freon,Alcohol,Isopropanol

 


other parts : FR2020FC  FR2040FC  FR2060FC  
FR2010FC PDF
Spansion
Spansion Inc.
S29GL032M10FCIR10 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCIR10 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR62 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 um MirrorBit process technology
■ SecSi™ (Secured Silicon) Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256Mb: 512 32 Kword (64 Kbyte) sectors
   — 128Mb: 256 32 Kword (64 Kbyte) sectors
   — 64Mb (uniform sector models): 128 32 Kword (64 Kbyte) sectors or 128 32 Kword sectors
   — 64Mb (boot sector models): 127 32 Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32Mb (uniform sector models): 64 32Kword (64 Kbyte) sectors of 64 32Kword sectors
   — 32Mb (boot sector models): 63 32Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128Mb, 64Mb, 32Mb), 100 ns access time (256Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128Mb, 64Mb, 32Mb)
   — 30 ns page read times (256Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL0128M10  S29GL0128M90  S29GL0256M10  S29GL0256M11  S29GL032M10  S29GL032M10BAIR50  S29GL032M10BAIR52  S29GL032M10BAIR53  S29GL032M10BAIR60  S29GL032M10BAIR62  
S29GL032M10FCIR62 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR72 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR72 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR13 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR13 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR90 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR90 PDF
Spansion
Spansion Inc.
S29GL032M10FCCR02 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCCR02 PDF
Spansion
Spansion Inc.
S29GL032M10FCIR23 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL032M10FCIR23 PDF
Spansion
Spansion Inc.
S29GL064M10FCIR32 MirrorBit Flash Family

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — 256 Mb: 512 32-Kword (64 Kbyte) sectors
   — 128 Mb: 256 32-Kword (64 Kbyte) sectors
   — 64 Mb (uniform sector models): 128 32-Kword (64-Kbyte) sectors or 128 32 Kword sectors
   — 64 Mb (boot sector models): 127 32-Kword (64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
   — 32 Mb (uniform sector models): 64 32-Kword (64-Kbyte) sectors of 64 32-Kword sectors
   — 32 Mb (boot sector models): 63 32-Kword (64 Kbyte) sectors + 8 4-Kword (8-Kbyte) boot sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   — 90 ns access time (128 Mb, 64 Mb, 32 Mb), 100 ns access time (256 Mb)
   — 4-word/8-byte page read buffer
   — 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
   — 30 ns page read times (256 Mb)
   — 16-word/32-byte write buffer
   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 18 mA typical active read current (64 Mb, 32 Mb)
   — 25 mA typical active read current (256 Mb, 128 Mb)
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 40-pin TSOP
   — 48-pin TSOP
   — 56-pin TSOP
   — 64-ball Fortified BGA
   — 48-ball fine-pitch BGA
   — 63-ball fine-pitch BGA

Software & Hardware Features
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
   — Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 


other parts : S29GL032M  S29GL032M10BACR00  S29GL032M10BACR02  S29GL032M10BACR03  S29GL032M10BACR10  S29GL032M10BACR12  S29GL032M10BACR13  S29GL032M10BACR20  S29GL032M10BACR22  S29GL032M10BACR23  
S29GL064M10FCIR32 PDF

1

23456789

New and Popular Datasheet

LM317  PN2222A  1N4007  LM324N  S7010  MB39A108_03  FT5753M  BSS110  2SK2019-01  2SK1279  2SK1277  2SK2050  2SK1507  2SK1507-01M  ESAD83-004  7MBR15SA120D-01  2MBI100NB-120  MMA8451Q  MMZ09312BT1  MPXV7002  MMA7260Q  33975_05  33975_08  ZVNL120A  2SD1351  65239-005LF_  XR21V1412  7MBR35SB120-01  SK3699-01MR  ESAD83-004K  D83-004  2SD1351  7MBR10VKA060-50  XR21V1412IL-0B-EB  NA12W-K  BSS110  ZVNL120A  MPC18730EP  M57184N-715B  M57184N-715B  ESAD83-004R  CA4800C  7MBP150RA060  RY5W-K  PDMB400B12C  MPXV5100GP  MPX5100  MMA7361LC  MC68HC11D3MFN1  MB91232L  MB91F267A  MB91230  MB90330A  MC68HC11E  TDA2030A  Part List  Manufacturers List 


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]