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ST13009

  

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ST-Microelectronics
STMicroelectronics
ST13009 Power bipolar transistors (Selection guide)

• Typical application (220V mains unless otherwise specified)
• Integrated antisaturation and protection network
• According to tube impedance
   120V AC mains
   277V AC mains
   340V AC mains
   As PFC 220V AC mains
 Suffix D = Integrated free-wheeling diode
 ST preferred products in bold
 Devices in green to be used in pairs

 


other parts : BUL1101E  BUL1102E  BUL116D  BUL118  BUL1203E  BUL128D-B  BUL138  BUL1403ED  BUL213  BUL216  
ST13009 PDF
ST-Microelectronics
STMicroelectronics
ST13009H High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds.

Features
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

Applications
■ Switch mode power supplies
 

ST13009H PDF
ST-Microelectronics
STMicroelectronics
ST13009L High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.


other parts : 13009H  13009L  
ST13009L PDF

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