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ST13007

  

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ST-Microelectronics
STMicroelectronics
ST13007 High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high
switching speeds and high voltage capability. It uses a cellular emitter structure with planar
edge termination to enhance switching speeds while maintaining the wide RBSOA.


other parts : ST13007A  ST13007B  
ST13007 PDF
ST-Microelectronics
STMicroelectronics
ST13007B High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high
switching speeds and high voltage capability. It uses a cellular emitter structure with planar
edge termination to enhance switching speeds while maintaining the wide RBSOA.


other parts : ST13007A  ST13007  
ST13007B PDF
ST-Microelectronics
STMicroelectronics
ST13007D Power bipolar transistors (Selection guide)

• Typical application (220V mains unless otherwise specified)
• Integrated antisaturation and protection network
• According to tube impedance
   120V AC mains
   277V AC mains
   340V AC mains
   As PFC 220V AC mains
 Suffix D = Integrated free-wheeling diode
 ST preferred products in bold
 Devices in green to be used in pairs

 


other parts : BUL1101E  BUL1102E  BUL116D  BUL118  BUL1203E  BUL128D-B  BUL138  BUL1403ED  BUL213  BUL216  
ST13007D PDF
ST-Microelectronics
STMicroelectronics
ST13007A High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high
switching speeds and high voltage capability. It uses a cellular emitter structure with planar
edge termination to enhance switching speeds while maintaining the wide RBSOA.


other parts : ST13007B  ST13007  
ST13007A PDF
ST-Microelectronics
STMicroelectronics
ST13007N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds

■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT


other parts : ST13007NFP  
ST13007N PDF
ST-Microelectronics
STMicroelectronics
ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.

■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERIZED AT 125 oC
■ LARGE

ST13007FP PDF
ST-Microelectronics
STMicroelectronics
ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

■ IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
■ HIGH VOLTAGE CAPABILITY
■ INTEGRATED FREE-WHEELING DIODE
■ LOW SPREAD OF

ST13007DFP PDF
ST-Microelectronics
STMicroelectronics
ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds

■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT


other parts : ST13007N  
ST13007NFP PDF

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