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ST13003

  

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Semtech-Electronics
Semtech Electronics LTD.
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

NPN Silicon Epitaxial Planar Transistor 
for power switching and electron rectifier applications.
The transistor is subdivided into one group according to its DC current gain. 

ST13003 PDF
ST-Microelectronics
STMicroelectronics
ST13003 Power bipolar transistors (Selection guide)

• Typical application (220V mains unless otherwise specified)
• Integrated antisaturation and protection network
• According to tube impedance
   120V AC mains
   277V AC mains
   340V AC mains
   As PFC 220V AC mains
 Suffix D = Integrated free-wheeling diode
 ST preferred products in bold
 Devices in green to be used in pairs

 


other parts : BUL1101E  BUL1102E  BUL116D  BUL118  BUL1203E  BUL128D-B  BUL138  BUL1403ED  BUL213  BUL216  
ST13003 PDF
ST-Microelectronics
STMicroelectronics
ST13003N High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

ST13003N PDF
Semtech-Electronics
Semtech Electronics LTD.
ST13003T NPN Silicon Power Transistors

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.


They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits.


other parts : ST13002T  
ST13003T PDF
ST-Microelectronics
STMicroelectronics
ST13003-K High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

ST13003-K PDF
ST-Microelectronics
STMicroelectronics
ST13003DN BJT NPN 700Vces 400Vceo Integrated Diode CFL ST13003DN PDF
ST-Microelectronics
STMicroelectronics
ST13003D-K High voltage fast-switching NPN power transistor

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.

ST13003D-K PDF

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