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SI2304

  

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Philips
Philips Electronics
SI2304 N-channel enhancement mode field-effect transistor

Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology
Product availability:
   SI2304DS in SOT23.
  
Features
■ TrenchMOS™ technology
■ Very fast switching
■ Subminiature surface mount package.

Applications
■ Battery management
■ High speed switch
■ Low power DC to DC converter.

 


other parts : SI2304DS  
SI2304 PDF
MCC
Micro Commercial Components
SI2304 N-Channel Enhancement Mode Field Effect Transistor

Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• 30V,2.5A, RDS(ON)=65 mΩ @ VGS=10V
  30V,2.0A, RDS(ON)=90 mΩ @ VGS=4.5V
• High dense cell design for extremely low RDS(ON)
• Rugged and reliable
• Lead free product is acquired
• SOT-23 Package
• Marking Code: S4

 


other parts : SI2304-TP  
SI2304 PDF
Philips
Philips Electronics
SI2304DS N-channel enhancement mode field-effect transistor

Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology
Product availability:
   SI2304DS in SOT23.
  
Features
■ TrenchMOS™ technology
■ Very fast switching
■ Subminiature surface mount package.

Applications
■ Battery management
■ High speed switch
■ Low power DC to DC converter.

 


other parts : SI2304  
SI2304DS PDF
MCC
Micro Commercial Components
SI2304-TP N-Channel Enhancement Mode Field Effect Transistor

Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• 30V,2.5A, RDS(ON)=65 mΩ @ VGS=10V
  30V,2.0A, RDS(ON)=90 mΩ @ VGS=4.5V
• High dense cell design for extremely low RDS(ON)
• Rugged and reliable
• Lead free product is acquired
• SOT-23 Package
• Marking Code: S4

 


other parts : SI2304  
SI2304-TP PDF

1

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