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SI2300

  

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Twtysemi
TY Semiconductor
SI2300 N-Channel Enhancement Mode Field Effect Transistor

Features
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A


other parts : KI2300  
SI2300 PDF
Kexin
KEXIN Industrial
SI2300 N-Channel Enhancement Mode Field Effect Transistor

Features
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A


other parts : KI2300  
SI2300 PDF
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.
SI2300 N-Channel Enhancement Mode Field Effect Transistor

Features
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A

SI2300 PDF
Vishay
Vishay Semiconductors
SI2300DS N-Channel 30-V (D-S) MOSFET

FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch


other parts : SI2300DS-T1-GE3  
SI2300DS PDF
Kexin
KEXIN Industrial
SI2300-HF N-Channel MOSFET

Features
●VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
●VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A
●VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A
●Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish


other parts : KI2300-HF  
SI2300-HF PDF
Vishay
Vishay Semiconductors
SI2300DS-T1-GE3 N-Channel 30-V (D-S) MOSFET

FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch


other parts : SI2300DS  
SI2300DS-T1-GE3 PDF

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