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NE5550979A-T1

  

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Renesas
Renesas Electronics
NE5550979A-T1 Silicon Power LDMOS FET

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact


other parts : NE5550979A  NE5550979A-A  NE5550979A-T1-A  NE5550979A-T1A  NE5550979A-T1A-A  
NE5550979A-T1 PDF
Renesas
Renesas Electronics
NE5550979A-T1A Silicon Power LDMOS FET

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact


other parts : NE5550979A  NE5550979A-A  NE5550979A-T1  NE5550979A-T1-A  NE5550979A-T1A-A  
NE5550979A-T1A PDF
Renesas
Renesas Electronics
NE5550979A-T1-A Silicon Power LDMOS FET

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact


other parts : NE5550979A  NE5550979A-A  NE5550979A-T1  NE5550979A-T1A  NE5550979A-T1A-A  
NE5550979A-T1-A PDF
Renesas
Renesas Electronics
NE5550979A-T1A-A Silicon Power LDMOS FET

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact


other parts : NE5550979A  NE5550979A-A  NE5550979A-T1  NE5550979A-T1-A  NE5550979A-T1A  
NE5550979A-T1A-A PDF

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