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NE5520279A-T1A

  

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NEC
NEC => Renesas Technology
NE5520279A-T1A 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally dif fused MOSFET specially designed as the power amplifier for mobile and fi xed wireless applications. Die are manufactured us ing NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount
package.

FEATURES
•  LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER:  +32 dBm TYP
• HIGH LINEAR GAIN:   10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY:  45% TYP at 1.8 GHz
• SINGLE SUPPLY:   2.8 to 6.0 V


other parts : NE5520279A  NE5520279A-T1-A  
NE5520279A-T1A PDF

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