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NE334S01

  

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NEC
NEC => Renesas Technology
NE334S01 C BAND SUPER LOW NOISE HJ FET

DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE


other parts : NE334S01-T1  NE334S01-T1B  
NE334S01 PDF
NEC
NEC => Renesas Technology
NE334S01-T1 C BAND SUPER LOW NOISE HJ FET

DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE


other parts : NE334S01  NE334S01-T1B  
NE334S01-T1 PDF
NEC
NEC => Renesas Technology
NE334S01-T1B C BAND SUPER LOW NOISE HJ FET

DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE


other parts : NE334S01  NE334S01-T1  
NE334S01-T1B PDF

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