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NE02107

  

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CEL
California Eastern Laboratories.
NE02107 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION
NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.

FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


other parts : NE021  NE02100  NE02107B  NE02133  NE02133-T1B  NE02135  NE02139  NE02139-T1  
NE02107 PDF
ETC
Unspecified
NE02107 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL]

DESCRIPTION
NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.

FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression

 


other parts : NE021  NE02100  NE02107B  NE02133-T1B  NE02135  NE02139-T1  NE02139  NE02133  
NE02107 PDF
NEC
NEC => Renesas Technology
NE02107 NPN SILICON HIGH FREQUENCY TRANSISTOR
other parts : 2SC2369  2SC1560  2SC1988  2SC2570  NE02100  NE02103  NE02112  NE02132  NE02133  NE02135  
NE02107 PDF
ETC
Unspecified
NE02107B NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL]

DESCRIPTION
NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.

FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression

 


other parts : NE021  NE02100  NE02107  NE02133-T1B  NE02135  NE02139-T1  NE02139  NE02133  
NE02107B PDF
CEL
California Eastern Laboratories.
NE02107B NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION
NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.

FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


other parts : NE021  NE02100  NE02107  NE02133  NE02133-T1B  NE02135  NE02139  NE02139-T1  
NE02107B PDF

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