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IRF9510

  

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KERSEMI
KERSEMIKERSEMI
IRF9510 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


other parts : IRF9510PBF  SIHF9510-E3  SIHF9510  
IRF9510 PDF
Intersil
IntersilIntersil
IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated

IRF9510 PDF
IR
IRIR
IRF9510 HEXFET® Power MOSFET

IRF9510 PDF
Vishay
VishayVishay
IRF9510 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


other parts : IRF9510PBF  SIHF9510-E3  SIHF9510  
IRF9510 PDF
Vishay
VishayVishay
IRF9510S No description available.

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low


other parts : IRF9510SPBF  IRF9510STRLPBF  IRF9510STRLPBFA  SIHF9510S  SIHF9510S-E3  SIHF9510S-GE3  SIHF9510STL-E3  SIHF9510STL-E3A  SIHF9510STRL-GE3  SIHF9510STRL-GE3A  
IRF9510S PDF
IR
IRIR
IRF9510S HEXFET® Power MOSFET


IRF9510S PDF
KERSEMI
KERSEMIKERSEMI
IRF9510PBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


other parts : IRF9510  SIHF9510-E3  SIHF9510  
IRF9510PBF PDF
Vishay
VishayVishay
IRF9510PBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


other parts : SIHF9510-E3  IRF9510  SIHF9510  
IRF9510PBF PDF
Vishay
VishayVishay
IRF9510STRR No description available.

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low


other parts : IRF9510S  IRF9510SPBF  IRF9510STRLPBF  IRF9510STRLPBFA  SIHF9510S  SIHF9510S-E3  SIHF9510S-GE3  SIHF9510STL-E3  SIHF9510STL-E3A  SIHF9510STRL-GE3  
IRF9510STRR PDF
Vishay
VishayVishay
IRF9510SPBF No description available.

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low


other parts : IRF9510S  IRF9510STRLPBF  IRF9510STRLPBFA  SIHF9510S  SIHF9510S-E3  SIHF9510S-GE3  SIHF9510STL-E3  SIHF9510STL-E3A  SIHF9510STRL-GE3  SIHF9510STRL-GE3A  
IRF9510SPBF PDF

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