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BLF522

  

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Philips
Philips Electronics
BLF522 UHF power MOS transistor

DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.

FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.

BLF522 PDF
ASI
Advanced Semiconductor
BLF522 UHF POWER MOS TRANSISTOR

DESCRIPTION:
The ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range.

FEATURES:
• Designed for broadband operation.
• High power gain
• Omnigold™ Metalization System

BLF522 PDF

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