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ADR291

  

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ADI
Analog Devices
ADR291 Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291ERZ  ADR291ERZ-REEL7  ADR291FRZ  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  ADR291GRZ  
ADR291 PDF
ADI
Analog Devices
ADR291FR Low Noise Micropower 2.048 V, 2.5 V, and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR290, ADR291 and ADR292 are low noise, micro power precision voltage references that use an XFET®reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Buried Zener-based references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term


other parts : ADR290  ADR290ER  ADR290ER-REEL  ADR290ER-REEL7  ADR290FR  ADR290FR-REEL  ADR290FR-REEL7  ADR290GBC  ADR290GR  ADR290GR-REEL  
ADR291FR PDF
ADI
Analog Devices
ADR291ER Low Noise Micropower 2.048 V, 2.5 V, and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR290, ADR291 and ADR292 are low noise, micro power precision voltage references that use an XFET®reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Buried Zener-based references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term


other parts : ADR290  ADR290ER  ADR290ER-REEL  ADR290ER-REEL7  ADR290FR  ADR290FR-REEL  ADR290FR-REEL7  ADR290GBC  ADR290GR  ADR290GR-REEL  
ADR291ER PDF
ADI
Analog Devices
ADR291GR Low Noise Micropower 2.048 V, 2.5 V, and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR290, ADR291 and ADR292 are low noise, micro power precision voltage references that use an XFET®reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Buried Zener-based references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term


other parts : ADR290  ADR290ER  ADR290ER-REEL  ADR290ER-REEL7  ADR290FR  ADR290FR-REEL  ADR290FR-REEL7  ADR290GBC  ADR290GR  ADR290GR-REEL  
ADR291GR PDF
ADI
Analog Devices
ADR291FRZ Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291  ADR291ERZ  ADR291ERZ-REEL7  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  ADR291GRZ  
ADR291FRZ PDF
ADI
Analog Devices
ADR291ERZ Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291  ADR291ERZ-REEL7  ADR291FRZ  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  ADR291GRZ  
ADR291ERZ PDF
ADI
Analog Devices
ADR291GRU Low Noise Micropower 2.048 V, 2.5 V, and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR290, ADR291 and ADR292 are low noise, micro power precision voltage references that use an XFET®reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Buried Zener-based references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term


other parts : ADR290  ADR290ER  ADR290ER-REEL  ADR290ER-REEL7  ADR290FR  ADR290FR-REEL  ADR290FR-REEL7  ADR290GBC  ADR290GR  ADR290GR-REEL  
ADR291GRU PDF
ADI
Analog Devices
ADR291GRZ Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291  ADR291ERZ  ADR291ERZ-REEL7  ADR291FRZ  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  
ADR291GRZ PDF
ADI
Analog Devices
ADR291GT9 Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.

ADR291GT9 PDF
ADI
Analog Devices
ADR291GBC Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.

ADR291GBC PDF
ADI
Analog Devices
ADR291GRUZ Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291  ADR291ERZ  ADR291ERZ-REEL7  ADR291FRZ  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  ADR291GRZ  
ADR291GRUZ PDF
ADI
Analog Devices
ADR291GT9Z Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References

GENERAL DESCRIPTION
The ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET® reference circuit. The new XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.


other parts : ADR291  ADR291ERZ  ADR291ERZ-REEL7  ADR291FRZ  ADR291FRZ-REEL  ADR291FRZ-REEL7  ADR291GRU-RELL  ADR291GRUZ  ADR291GRUZ-REEL  ADR291GRUZ-REEL7  
ADR291GT9Z PDF

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