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Manufacturer Part no Description View
Hynix
Hynix Semiconductor
HY51VS17403HGLJ-5 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51VS17403HGLJ-5 PDF
Hynix
Hynix Semiconductor
HY51V17403HGLT-5 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51V17403HGLT-5 PDF
Hynix
Hynix Semiconductor
HY51VS17403HG 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG-5  HY51VS17403HG-6  
HY51VS17403HG PDF
Hynix
Hynix Semiconductor
HY51VS17403HGLT-7 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51VS17403HGLT-7 PDF
RFMD
RF Micro Devices
D8740320GT GaAs Power Doubler Hybrid 40MHz to 870MHz

The D8740320GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

Features
■ Excellent Linearity
■ Superior Return Loss Performance
■ Extremely Low Distortion
■ Optimal Reliability
■ Low Noise
■ Unconditionally Stable Under All Terminations
■ 32.0dB Min. Gain at 870MHz
■ 375mA Max. at 24VDC

Applications
■ 40MHz to 870MHz CATV Amplifier Systems

 

D8740320GT PDF
Hynix
Hynix Semiconductor
HY51V17403HG-7 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  HY51VS17403HG-6  
HY51V17403HG-7 PDF
Hynix
Hynix Semiconductor
HY51V17403HGT-7 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51V17403HGT-7 PDF
Hynix
Hynix Semiconductor
HY51VS17403HGJ-6 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51VS17403HGJ-6 PDF
Hynix
Hynix Semiconductor
HY51V17403HGL-5 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  HY51VS17403HG-6  
HY51V17403HGL-5 PDF
Hynix
Hynix Semiconductor
HY51VS17403HGL-7 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51VS17403HGL-7 PDF
Hynix
Hynix Semiconductor
HY51V17403HGLJ-7 4M x 4Bit EDO DRAM

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)


other parts : HY51V17403HG  HY51V17403HG-5  HY51V17403HG-6  HY51V17403HG-7  HY51V17403HGL  HY51V17403HGL-5  HY51V17403HGL-6  HY51V17403HGL-7  HY51VS17403HG  HY51VS17403HG-5  
HY51V17403HGLJ-7 PDF
MaximIC
Maxim Integrated
MAX7403ESA 8th-Order, Lowpass, Elliptic, Switched-Capacitor Filters

General Description
The MAX7400/MAX7403/MAX7404/MAX7407 8th-order, lowpass, elliptic, switched-capacitor filters (SCFs) operate from a single +5V (MAX7400/MAX7403) or +3V (MAX7404/MAX7407) supply. These devices draw 2mA of supply current and allow corner frequencies from 1Hz to 10kHz, making them ideal for low-power anti-aliasing and post-DAC filtering applications. They feature a shutdown mode that reduces the supply current to 0.2µA.
Two clocking options are available: self-clocking (through the use of an external capacitor) or external clocking for tighter cutoff-frequency control. In addition, an offset adjustment pin (OS) allows for the adjustment of the DC output level.
The MAX7400/MAX7404 provide 82dB of stopband rejection and a sharp rolloff with a transition ratio of 1.5. The MAX7403/MAX7407 provide a sharper rolloff with a transition ratio of 1.2, while still delivering 60dB of stop band rejection. The fixed response of these devices simplifies the design task to corner-frequency selection by setting a clock frequency. The MAX7400/MAX7403/MAX7404/MAX7407 are available in 8-pin SO and DIP packages.

Features
♦ 8th-Order Lowpass Elliptic Filter
♦ Low Noise and Distortion
   -82dB THD + Noise (MAX7400)
♦ Clock-Tunable Corner Frequency (1Hz to 10kHz)
♦ 100:1 Clock-to-Corner Ratio
♦ Single-Supply Operation
   +5V (MAX7400/MAX7403)
   +3V (MAX7404/MAX7407)
♦ Low Power
   2mA (Operating Mode)
   0.2µA (Shutdown Mode)
♦ Available in 8-Pin SO and DIP Packages
♦ Low Output Offset: ±5mV

Applications
   ADC Anti-Aliasing
   Speech Processing
   Post-DAC Filtering
   Air-Bag Electronics
   CT2 Base Stations


other parts : MAX7400  MAX7400CPA  MAX7400CSA  MAX7400EPA  MAX7400ESA  MAX7403  MAX7403CPA  MAX7403CSA  MAX7403EPA  MAX7404  
MAX7403ESA PDF

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