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2SD835

  

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NJSEMI
New Jersey Semiconductor
2SD835 Silicon NPN Darlington Power Transistor

Features
• High D.C. current gain
• Low saturation voltage
• Excellent safe operating area
• High reliability

Applications
• Electronic ignitor
• Relay & solenoid drivers
• Swithing regulators
• Motor controls


other parts : D835  
2SD835 PDF
Fuji
Fuji Electric
2SD835 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, SWITCHING 2SD835 PDF
Iscsemi
Inchange Semiconductor
2SD835 Silicon NPN Darlington Power Transistor

DESCRIPTION
·High DC Current Gain-
   : hFE= 400(Min) @IC= 4A
·Low Collector Saturation Voltage-
   : VCE(sat)= 1.5V(Max.) @ IC= 4A

APPLICATIONS
·Electronic ignitor
·Relay& solenoid drivers
·Motor controls
·Switching regulators

 


other parts : D835  
2SD835 PDF

1

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