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2N120BN

  

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Intersil
Intersil
HGT1S2N120BNS 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : 2N120BN  HGTD2N120BNS  HGTP2N120BN  HGT1S2N120BNS9A  HGTD2N120BNS9A  HGTP2N120BN9A  
HGT1S2N120BNS PDF
Intersil
Intersil
HGTD2N120BNS9A 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : 2N120BN  HGT1S2N120BNS  HGTD2N120BNS  HGTP2N120BN  HGT1S2N120BNS9A  HGTP2N120BN9A  
HGTD2N120BNS9A PDF
Intersil
Intersil
HGTD2N120BNS 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : 2N120BN  HGT1S2N120BNS  HGTP2N120BN  HGT1S2N120BNS9A  HGTD2N120BNS9A  HGTP2N120BN9A  
HGTD2N120BNS PDF
Intersil
Intersil
HGTP2N120BN9A 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : 2N120BN  HGT1S2N120BNS  HGTD2N120BNS  HGTP2N120BN  HGT1S2N120BNS9A  HGTD2N120BNS9A  
HGTP2N120BN9A PDF
Intersil
Intersil
HGT1S2N120BNS9A 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : 2N120BN  HGT1S2N120BNS  HGTD2N120BNS  HGTP2N120BN  HGTD2N120BNS9A  HGTP2N120BN9A  
HGT1S2N120BNS9A PDF
Intersil
Intersil
HGTP2N120BND 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : HGT1S2N120BNDS  
HGTP2N120BND PDF
Intersil
Intersil
HGT1S2N120BNDS 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential,


other parts : HGTP2N120BND  
HGT1S2N120BNDS PDF

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