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End *P2N120BN *S2N120BN *D2N120BN
Included *2N120BN9* *2N120BND* *2N120BNS*
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2N120BN 12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49312.

• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
   Temperature Compensating SABER™ Model
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


other parts : HGT1S2N120BNS  HGTD2N120BNS  HGTP2N120BN  HGT1S2N120BNS9A  HGTD2N120BNS9A  HGTP2N120BN9A  


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