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TSAL640008

  

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Vishay
Vishay Semiconductors
TSAL6400 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

DESCRIPTION
TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers

TSAL6400 PDF
Vishay
Vishay Semiconductors
TSAL6400.. High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs TSAL6400.. PDF
Vishay
Vishay Semiconductors
TSAL6400_08 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

DESCRIPTION
TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers

TSAL6400_08 PDF
Vishay
Vishay Semiconductors
TSAL6400_99 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package

Description
TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, blue grey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1¾ (ø 5 mm) package
● Angle of half intensity ϕ = ± 25°
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

Applications
  Infrared remote control units with high power requirements
  Free air transmission systems
  Infrared source for optical counters and card readers
  IR source for smoke detectors

TSAL6400_99 PDF

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