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TK7A55D

  

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Toshiba
Toshiba
TK7A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.6 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)


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