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TIP117

  

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Mospec
MospecMospec
TIP117 2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS 50 WATTS



other parts : TIP110  TIP111  TIP112  TIP115  TIP116  
TIP117 PDF
Fairchild
FairchildFairchild
TIP117 PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112


other parts : TIP115  TIP116  
TIP117 PDF
Savantic
SavanticSavantic
TIP117 Silicon PNP Darlington Power Transistors

DESCRIPTION
• With TO-220C package
• DARLINGTON
• High DC current gain
• Low collector saturation voltage
• Complement to type TIP110/111/112

APPLICATIONS
• For industrial use


other parts : TIP115  TIP116  
TIP117 PDF
Transys-Electronics
Transys-ElectronicsTransys-Electronics
TIP117 100 V, 4 A, PNP silicon power darlington


other parts : TIP115  TIP116  
TIP117 PDF
DC-Components
DC-ComponentsDC-Components
TIP117 TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description
Designed for use in general purpose amplifier and low-speed switching applications.

Pinning
1 = Base
2 = Collector
3 = Emitter

TIP117 PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
TIP117 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 50 WATTS

Plastic Medium-Power Complementary Silicon Transistors

Designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain −
   hFE = 2500 (Typ) @ IC
       = 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
   VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115
             = 80 Vdc (Min) −


other parts : TIP110  TIP110G  TIP111  TIP111G  TIP112  TIP112G  TIP115  TIP115G  TIP116  TIP116G  
TIP117 PDF
MCC
MCCMCC
TIP117_2008 PNP Epitaxial Silicon Darlington Transistors

Features
● High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
● Low Collector-Emitter Saturation Voltage
● Complementary to TIP110/111/112
● Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designate RoHS Compliant. See ordering information)
● Case Material: Molded Plastic. UL Flammability
   Classification Rating 94V-0 and MSL Rating 1


other parts : TIP115_2008  TIP116_2008  
TIP117 PDF
Rectron
RectronRectron
TIP117 TO-220 - Power Transistors and Darlingtons



other parts : 2N5294  2N5296  2N5298  2N6107  2N6109  2N6121  2N6290  2N6292  BD239C  BD240C  
TIP117 PDF
KEC
KECKEC
TIP117 EPITAXIAL PLANAR PNP TRANSISTOR

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES
• High DC Current Gain.
   : hFE=1000(Min.), @VCE=-4V, IC=-1A.
• Low Collector-Emitter Saturation Voltage.
• Complementary to TIP112.

TIP117 PDF
Comset
ComsetComset
TIP117 SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications.
NPN complements are TIP110-111-112
Compliance to RoHS.


other parts : TIP115  TIP116  
TIP117 PDF

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