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TC1101

  

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TRANSCOM
Transcom, Inc.
TC1101 Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested


other parts : TC1101P0710  TC1101P0811  TC1101P0912  
TC1101 PDF
ETC2
Unspecified
TC1101 Low Noise and Medium Power GaAs FETs

[TRANSCOM]

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested

TC1101 PDF
TRANSCOM
Transcom, Inc.
TC1101_2002 Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested

TC1101 PDF
TRANSCOM
Transcom, Inc.
TC1101V Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
Via holes for source grounding
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested

TC1101V PDF
TRANSCOM
Transcom, Inc.
TC1101P0710 Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested


other parts : TC1101  TC1101P0811  TC1101P0912  
TC1101P0710 PDF
TRANSCOM
Transcom, Inc.
TC1101P0811 Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested


other parts : TC1101  TC1101P0710  TC1101P0912  
TC1101P0811 PDF
TRANSCOM
Transcom, Inc.
TC1101P0912 Low Noise and Medium Power GaAs FETs

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
• Low Noise Figure:
   NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
   Ga = 12 dB Typical at 12 GHz
• High Dynamic Range:
   1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested


other parts : TC1101  TC1101P0710  TC1101P0811  
TC1101P0912 PDF

1

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