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SST
Silicon Storage Technology
SST39SF020A 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
     2 seconds (typical) for SST39SF010A
     4 seconds (typical) for SST39SF020A
     8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant
• All non-Pb (lead-free) devices are RoHS compliant


other parts : SST39SF010A  SST39SF010A-55-4C-NH  SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-PH  SST39SF010A-55-4C-PHE  SST39SF010A-55-4C-WH  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NH  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-PH  
SST39SF020A PDF
Microchip
Microchip Technology
SST39SF020A 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Product Description
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured withSST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories

Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant


other parts : SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-WHE  SST39SF010A-70-4C-NHE  SST39SF010A-70-4C-PHE  SST39SF010A-70-4C-WHE  SST39SF010A-70-4I-NHE  SST39SF010A-70-4I-WHE  SST39SF020A-55-4C-NHE  
SST39SF020A PDF
SST
Silicon Storage Technology
SST39SF020A_01 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 5.0V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 5.0V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption:
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 45 and 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
      – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-pin PLCC
   – 32-pin TSOP (8mm x 14mm)
   – 32-pin PDIP


other parts : SST39SF010A-45-4C-U1  SST39SF010A-45-4I-U1  SST39SF010A-70-4C-U1  SST39SF010A-70-4I-U1  SST39SF010A_01  SST39SF020A-45-4C-U1  SST39SF020A-45-4I-U1  SST39SF020A-70-4C-U1  SST39SF020A-70-4I-U1  SST39SF040A-45-4C-U1  
SST39SF020A_01 PDF
SST
Silicon Storage Technology
SST39SF020A_04 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 45 ns
   – 70 ns
• Latched Address and Data (x8)
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP


other parts : SST39SF010A-45-4C-NH  SST39SF010A-45-4C-NHE  SST39SF010A-45-4C-PH  SST39SF010A-45-4C-PHE  SST39SF010A-45-4C-WH  SST39SF010A-45-4C-WHE  SST39SF010A-45-4I-NH  SST39SF010A-45-4I-NHE  SST39SF010A-45-4I-PH  SST39SF010A-45-4I-PHE  
SST39SF020A_04 PDF
Microchip
Microchip Technology
SST39SF020A-70-4I-WH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Product Description
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured withSST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories

Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant


other parts : SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-WHE  SST39SF010A-70-4C-NHE  SST39SF010A-70-4C-PHE  SST39SF010A-70-4C-WHE  SST39SF010A-70-4I-NHE  SST39SF010A-70-4I-WHE  SST39SF020A-55-4C-NHE  
SST39SF020A-70-4I-WH PDF
Microchip
Microchip Technology
SST39SF020A-55-4I-NH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Product Description
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured withSST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories

Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant


other parts : SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-WHE  SST39SF010A-70-4C-NHE  SST39SF010A-70-4C-PHE  SST39SF010A-70-4C-WHE  SST39SF010A-70-4I-NHE  SST39SF010A-70-4I-WHE  SST39SF020A-55-4C-NHE  
SST39SF020A-55-4I-NH PDF
SST
Silicon Storage Technology
SST39SF020A-45-4C-PH 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 45 ns
   – 70 ns
• Latched Address and Data (x8)
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP


other parts : SST39SF010A-45-4C-NH  SST39SF010A-45-4C-NHE  SST39SF010A-45-4C-PH  SST39SF010A-45-4C-PHE  SST39SF010A-45-4C-WH  SST39SF010A-45-4C-WHE  SST39SF010A-45-4I-NH  SST39SF010A-45-4I-NHE  SST39SF010A-45-4I-PH  SST39SF010A-45-4I-PHE  
SST39SF020A-45-4C-PH PDF
SST
Silicon Storage Technology
SST39SF020A-70-4I-NH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
     2 seconds (typical) for SST39SF010A
     4 seconds (typical) for SST39SF020A
     8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant
• All non-Pb (lead-free) devices are RoHS compliant


other parts : SST39SF010A  SST39SF010A-55-4C-NH  SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-PH  SST39SF010A-55-4C-PHE  SST39SF010A-55-4C-WH  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NH  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-PH  
SST39SF020A-70-4I-NH PDF
Microchip
Microchip Technology
SST39SF020A-55-5I-WH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Product Description
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured withSST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories

Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant


other parts : SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-WHE  SST39SF010A-70-4C-NHE  SST39SF010A-70-4C-PHE  SST39SF010A-70-4C-WHE  SST39SF010A-70-4I-NHE  SST39SF010A-70-4I-WHE  SST39SF020A-55-4C-NHE  
SST39SF020A-55-5I-WH PDF
SST
Silicon Storage Technology
SST39SF020A-70-4I-UH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 5.0V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 5.0V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption:
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 45 and 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
      – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-pin PLCC
   – 32-pin TSOP (8mm x 14mm)
   – 32-pin PDIP


other parts : SST39SF010A-45-4C-U1  SST39SF010A-45-4I-U1  SST39SF010A-70-4C-U1  SST39SF010A-70-4I-U1  SST39SF010A_01  SST39SF020A-45-4C-U1  SST39SF020A-45-4I-U1  SST39SF020A-70-4C-U1  SST39SF020A-70-4I-U1  SST39SF020A_01  
SST39SF020A-70-4I-UH PDF
Microchip
Microchip Technology
SST39SF020A-70-4C-PH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

Product Description
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured withSST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories

Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39SF010A
      4 seconds (typical) for SST39SF020A
      8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant


other parts : SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-WHE  SST39SF010A-70-4C-NHE  SST39SF010A-70-4C-PHE  SST39SF010A-70-4C-WHE  SST39SF010A-70-4I-NHE  SST39SF010A-70-4I-WHE  SST39SF020A-55-4C-NHE  
SST39SF020A-70-4C-PH PDF
SST
Silicon Storage Technology
SST39SF020A-55-4C-NH 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption
   (typical values at 14 MHz)
   – Active Current: 10 mA (typical)
   – Standby Current: 30 µA (typical)
• Sector-Erase Capability
   – Uniform 4 KByte sectors
• Fast Read Access Time:
   – 55 ns
   – 70 ns
• Latched Address and Data
• Automatic Write Timing
   – Internal VPP Generation
• Fast Erase and Byte-Program
   – Sector-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Byte-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
     2 seconds (typical) for SST39SF010A
     4 seconds (typical) for SST39SF020A
     8 seconds (typical) for SST39SF040
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm)
   – 32-pin PDIP
• All devices are RoHS compliant
• All non-Pb (lead-free) devices are RoHS compliant


other parts : SST39SF010A  SST39SF010A-55-4C-NH  SST39SF010A-55-4C-NHE  SST39SF010A-55-4C-PH  SST39SF010A-55-4C-PHE  SST39SF010A-55-4C-WH  SST39SF010A-55-4C-WHE  SST39SF010A-55-4I-NH  SST39SF010A-55-4I-NHE  SST39SF010A-55-4I-PH  
SST39SF020A-55-4C-NH PDF

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