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SKB15N60HS

  

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Infineon
Infineon Technologies
SKB15N60HS High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
   - parallel switching capability
   - moderate Eoff increase with temperature
   - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


other parts : K15N60HS  
SKB15N60HS PDF
Infineon
Infineon Technologies
SKB15N60HS_2006 High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
   - parallel switching capability
   - moderate Eoff increase with temperature
   - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


other parts : K15N60HS_2006  
SKB15N60HS PDF

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