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RJK60S3DPE-00-J3 600V - 12A - SJ MOS FET High Speed Power Switching

● Superjunction MOSFET
● Low on-resistance
   RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
● High speed switching
   tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50Ω, Rg = 10, Ta = 25°C)

other parts : RJK60S3DPE  RJK60S3DPE-00J3  


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